Publications NDL & POEM

  • G. Liu, sE. Zhang, C. Liang, M. Bloodgood, T. Salguero, D. Fleetwood, A. Balandin, “Total-Ionizing-Dose Effects on Threshold Switching in 1T-TaS2 Charge Density Wave Devices,” IEEE Electron Device Lett., vol. 38, no. 12, pp. 1724–1727, Dec. 2017.

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  • G. Liu, S. Rumyantsev, M. A. Bloodgood, T. T. Salguero, M. Shur, and A. A. Balandin, “Low-Frequency Electronic Noise in Quasi-1D TaSe 3 van der Waals Nanowires,” Nano Lett., vol. 17, no. 1, pp. 377–383, Jan. 2017.

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  • M. M. Lacerda, F. Kargar, E. Aytan, R. Samnakay, B. Debnath, J. X. Li, A. Khitun, R. K. Lake, J. Shi, and A. A. Balandin, “Variable-temperature inelastic light scattering spectroscopy of nickel oxide:Disentangling phonons and magnons,” Appl. Phys. Lett., vol. 110, no. 20, p. 202406,2017.

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  • S. Ramirez, K. Chan, R. Hernandez, E. Recinos, E. Hernandez, R. Salgado, A. G. Khitun, J. E. Garay, and A. A. Balandin, “Thermal and magnetic properties of nanostructured densified ferrimagnetic composites with graphene - graphite fillers,” Mater. Des., vol. 118, pp. 75–80, 2017.

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  • A. Khitun, G. Liu, and A. A. Balandin, “Two-Dimensional Oscillatory Neural Network Based on Room-Temperature Charge-Density-Wave Devices,” IEEE Trans. Nanotechnol., vol. 16, no. 5, pp. 860–867, Sep. 2017.

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  • D. L. Nika and A. A. Balandin, “Phonons and thermal transport in graphene and graphene-based materials,” Reports Prog. Phys., vol. 80, no. 3, p. 36502, Mar. 2017.

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  • H. Malekpour and A. A. Balandin, "Raman-based technique for measuring thermal conductivity of graphene and related materials", Journal of Raman Spectroscopy (2017)

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  • M. Balynsky, D. Gutierrez, H. Chiang, A. Kozhevnikov, G. Dudko, Y. Filimonov, A. A. Balandin, A. Khitun, “A Magnetometer Based on a Spin Wave Interferometer,” Sci. Rep., vol. 7, no. 1, p. 11539, 2017.

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  • P. Ramnani, M. R. Neupane, S. Ge, A. A. Balandin, R. K. Lake, and A. Mulchandani, “Raman spectra of twisted CVD bilayer graphene,” Carbon N. Y., vol. 123, pp. 302–306, 2017.

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  • R. Samnakay, A. A. Balandin, and P. Srinivasan, “Reliability characterization of SiON and MGHK MOSFETs using flicker noise and its correlation with the bias temperature instability,” Solid. State. Electron., vol. 135, pp. 37–42, 2017.

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  • M. Saadah, E. Hernandez, and A. A. Balandin, “Thermal management of concentrated multi-junction solar cells with graphene-enhanced thermal interface materials,” Appl. Sci., vol. 7, no. 6, p. 589, Jun. 2017.

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  • M. Balynsky, A. Kozhevnikov, Y. Khivintsev, T. Bhowmick, D. Gutierrez, H. Chiang, G. Dudko, Y. Filimov, G. Liu, C. Jiang, A. Balandin, R. Lake, A. Khitun, “Magnonic interferometric switch for multi-valued logic circuits,” J. Appl. Phys., vol. 121, no. 2, p. 24504, Jan. 2017.

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  • D. Gutierrez, H. Chiang, T. Bhowmick, A. D. Volodchenkov, M. Ranjbar, G. Liu, C. Jiang, C. Warren, Y. Khivintsev, Y. Filimonov, J. Garay, R. Lake, A. A. Balandin, and A. Khitun, “Magnonic holographic imaging of magnetic microstructures,” J. Magn. Magn. Mater., vol. 428, pp. 348–356, 2017.

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  • A. D. Volodchenkov, S. Ramirez, R. Samnakay, R. Salgado, Y. Kodera, A. A. Balandin, and J. E. Garay, “Magnetic and thermal transport properties of SrFe12O19 permanent magnets with anisotropic grain structure,” Mater. Des., vol. 125, pp. 62–68, 2017.

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  • G. Liu, B. Debnath, T. R. Pope, T. T. Salguero, R. K. Lake, and A. A. Balandin, “A charge-density-wave oscillator based on an integrated tantalum disulfide–boron nitride–graphene device operating at room temperature,” Nat Nano, vol. 11, no. 10, pp. 845–850, Oct. 2016.

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  • G. Liu, S. Rumyantsev, M. A. Bloodgood, T. T. Salguero, M. Shur, and A. A. Balandin, “Low-frequency electronic noise in quasi-1D TaSe3 van der Waals nanowires,” Nano Lett., vol. 17, no. 1, pp. 377–383, Jan. 2017.

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  • M. A. Stolyarov, G. Liu, M. A. Bloodgood, E. Aytan, C. Jiang, R. Samnakay, T. T. Salguero, D. L. Nika, S. L. Rumyantsev, M. S. Shur, K. N. Bozhilov, and A. A. Balandin, “Breakdown current density in h-BN-capped quasi-1D TaSe3 metallic nanowires: prospects of interconnect applications,” Nanoscale, vol. 8, no. 34, pp. 15774–15782, 2016.

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  • A. Politano, G. Chiarello, R. Samnakay, G. Liu, B. Gürbulak, S. Duman, A. A. Balandin, and D. W. Boukhvalov, “The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices,” Nanoscale, vol. 2, no. 16, pp. 34–36, 2016.

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  • F. Kargar, B. Debnath, J.-P. Kakko, A. Säynätjoki, H. Lipsanen, D. L. Nika, R. K. Lake, and A. A. Balandin, “Direct observation of confined acoustic phonon polarization branches in free-standing semiconductor nanowires,” Nat. Commun., vol. 7, p. 13400, Nov. 2016.

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  • D. Berman, S. A. Deshmukh, B. Narayanan, S. K. R. S. Sankaranarayanan, Z. Yan, A. A. Balandin, A. Zinovev, D. Rosenmann, and A. V. Sumant, “Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale,” Nat. Commun., vol. 7, p. 12099, Jul. 2016.

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  • H. Malekpour, P. Ramnani, S. Srinivasan, G. Balasubramanian, D. L. Nika, A. Mulchandani, R. K. Lake, and A. A. Balandin, “Thermal conductivity of graphene with defects induced by electron beam irradiation,” Nanoscale, vol. 8, no. 30, pp. 14608–14616, 2016.

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  • A. Alvarez Barragan, H. Malekpour, S. Exarhos, A. A. Balandin, and L. Mangolini, “Grain-to-grain compositional variations and phase segregation in copper-zinc-tin-sulfide films,” ACS Appl. Mater. Interfaces, vol. 8, no. 35, pp. 22971–22976, Sep. 2016.

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  • M. Saadah, D. Gamalath, E. Hernandez, and A. A. Balandin, “Graphene-enhanced thermal interface materials for heat removal from photovoltaic solar cells,” Proc. SPIE, vol. 9932. p. 99320H–99320H–7, 2016.

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  • R. Salgado, E. Lee, E. V Shevchenko, and A. A. Balandin, “Carbon nanotube: nanodiamond Li-ion battery cathodes with increased thermal conductivity,” Proc. SPIE, vol. 9932. pp. 993204–993207, 2016.

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  • R. Samnakay, D. Wickramaratne, T. R. Pope, R. K. Lake, T. T. Salguero, and A. A. Balandin, “Zone-folded phonons and the commensurate-incommensurate charge-density-wave transition in 1T -TaSe2 thin films,” Nano Lett., vol. 15, no. 5, pp. 2965–2973, May 2015.

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  • C. Jiang, S. L. Rumyantsev, R. Samnakay, M. S. Shur, and A. A. Balandin, “High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics,” J. Appl. Phys., vol. 117, no. 6, p. 64301, Feb. 2015.

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  • R. Samnakay, C. Jiang, S. L. Rumyantsev, M. S. Shur, and A. A. Balandin, “Selective chemical vapor sensing with few-layer MoS2 thin-film transistors: Comparison with graphene devices,” Appl. Phys. Lett., vol. 106, no. 2, p. 23115, Jan. 2015.

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  • M. A. Stolyarov, G. Liu, S. L. Rumyantsev, M. Shur, and A. A. Balandin, “Suppression of 1/ f noise in near-ballistic h-BN-graphene-h-BN heterostructure field-effect transistors,” Appl. Phys. Lett., vol. 107, no. 2, p. 23106, Jul. 2015.

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  • S. L. Rumyantsev, C. Jiang, R. Samnakay, M. S. Shur, and A. A. Balandin, “1/f Noise Characteristics of MoS2 Thin-Film Transistors: Comparison of Single and Multilayer Structures,” IEEE Electron Device Lett., vol. 36, no. 5, pp. 517–519, May 2015.

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  • G. Liu, S. L. Rumyantsev, C. Jiang, M. S. Shur, and A. A. Balandin, “Selective Gas Sensing with h-BN Capped MoS2 Heterostructure Thin Film Transistors,” IEEE Electron device Lett., vol. 36, no. 11, pp. 1202–1204, Nov. 2015.

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  • J. Renteria, S. Legedza, R. Salgado, M. P. Balandin, S. Ramirez, M. Saadah, F. Kargar, and A. A. Balandin, “Magnetically-functionalized self-aligning graphene fillers for high-efficiency thermal management applications,” Mater. Des., vol. 88, pp. 214–221, Dec. 2015.

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  • J. D. Renteria, S. Ramirez, H. Malekpour, B. Alonso, A. Centeno, A. Zurutuza, A. I. Cocemasov, D. L. Nika, and A. A. Balandin, “Strongly Anisotropic Thermal Conductivity of Free-Standing Reduced Graphene Oxide Films Annealed at High Temperature,” Adv. Funct. Mater., vol. 25, no. 29, pp. 4664–4672, Aug. 2015.

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  • A. I. Cocemasov, D. L. Nika, and A. A. Balandin, “Engineering of the thermodynamic properties of bilayer graphene by atomic plane rotations: the role of the out-of-plane phonons,” Nanoscale, vol. 7, no. 30, pp. 12851–12859, 2015.

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  • Z. Yan, D. L. Nika, and A. A. Balandin, “Thermal properties of graphene and few-layer graphene: applications in electronics,” IET Circuits, Devices Syst., vol. 9, no. 1, pp. 4–12, 2015.

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  • A. A. Balandin, “Graphene Heat Spreaders and Interconnects for Advanced Electronic Applications,” ECS Trans., vol. 67, no. 1, p. 167, May 2015.

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  • F. Kargar, S. Ramirez, B. Debnath, H. Malekpour, R. K. Lake, and A. A. Balandin, “Acoustic phonon spectrum and thermal transport in nanoporous alumina arrays,” Appl. Phys. Lett., vol. 107, no. 17, p. 171904, Oct. 2015.

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  • V. M. Fomin and A. A. Balandin, “Phonon Spectrum Engineering in Rolled-up Micro- and Nano-Architectures,” Appl. Sci., vol. 5, no. 4, pp. 728–746, Oct. 2015.

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  • A. A. Balandin, F. Kargar, S. Ramirez, and H. Malekpour, “Brillouin-Mandelstam Light Scattering Spectroscopy of the Nanoscale Phononic Superlattice Arrays,” Nonlinear Opt., p. NTh3A.4, 2015..

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  •  H. Malekpour, K.-H. Chang, J.-C. Chen, C.-Y. Lu, D. L. Nika, K. S. Novoselov, and A. A. Balandin, “Thermal Conductivity of Graphene Laminate,” Nano Lett., vol. 14, no. 9, pp. 5155–5161, Sep. 2014.

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  • P. Goli, H. Ning, X. Li, C. Y. Lu, K. S. Novoselov, and A. A. Balandin, “Thermal Properties of Graphene–Copper–Graphene Heterogeneous Films,” Nano Lett., vol. 14, no. 3, pp. 1497–1503, Mar. 2014.

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  • H. Li, H. Ying, X. Chen, D. L. Nika, A. I. Cocemasov, W. Cai, A. A. Balandin, S. Chen, R. S. Ruoff, S. Roth, A. K. Geim, R. S. Ruoff, and L. Shi, “Thermal conductivity of twisted bilayer graphene,” Nanoscale, vol. 6, no. 22, pp. 13402–13408, Sep. 2014.

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  • D. L. Nika, A. I. Cocemasov, and A. A. Balandin, “Specific heat of twisted bilayer graphene: Engineering phonons by atomic plane rotations,” Appl. Phys. Lett., vol. 105, no. 3, p. 31904, Jul. 2014.

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  • A. A. Balandin, “Phonon engineering in graphene and van der Waals materials,” MRS Bull., vol. 39, no. 9, pp. 817–823, 2014.

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  • B. Koo, P. Goli, A. V. Sumant, P. C. dos Santos Claro, T. Rajh, C. S. Johnson, A. A. Balandin, and E. V. Shevchenko, “Toward Lithium Ion Batteries with Enhanced Thermal Conductivity,” ACS Nano, vol. 8, no. 7, pp. 7202–7207, Jul. 2014.

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  • J. Renteria, D. Nika, and A. Balandin, “Graphene Thermal Properties: Applications in Thermal Management and Energy Storage,” Appl. Sci., vol. 4, no. 4, pp. 525–547, Nov. 2014.

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  •  P. Goli, S. Legedza, A. Dhar, R. Salgado, J. Renteria, and A. A. Balandin, “Graphene-enhanced hybrid phase change materials for thermal management of Li-ion batteries,” J. Power Sources, vol. 248, pp. 37–43, Feb. 2014.

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  • J. Renteria, R. Samnakay, S. L. Rumyantsev, C. Jiang, P. Goli, M. S. Shur, and A. A. Balandin, “Low-frequency 1/f noise in MoS2 transistors: Relative contributions of the channel and contacts,” Appl. Phys. Lett., vol. 104, no. 15, p. 153104, Apr. 2014.

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  • J. Renteria, R. Samnakay, C. Jiang, T. R. Pope, P. Goli, Z. Yan, D. Wickramaratne, T. T. Salguero, A. G. Khitun, R. K. Lake, and A. A. Balandin, “All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits,” J. Appl. Phys., vol. 115, no. 3, p. 34305, Jan. 2014.

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  • A. A. Balandin and D. L. Nika, “Graphene and Graphene Multilayers: Phonon Thermal Transport,” in Dekker Encyclopedia of Nanoscience and Nanotechnology, Third Edition, CRC Press, 2014, pp. 1668–1684.

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  • A. A. Balandin, “Low-frequency 1/f noise in graphene devices,” Nat Nano, vol. 8, no. 8, pp. 549–555, Aug. 2013.

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  • G. Liu, S. Rumyantsev, M. S. Shur, and A. A. Balandin, “Origin of 1/ f noise in graphene multilayers: Surface vs. volume,” Appl. Phys. Lett., vol. 102, no. 9, p. 93111, Mar. 2013.

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  • M. Zahid Hossain, S. Rumyantsev, M. S. Shur, and A. A. Balandin, “Reduction of 1/ f noise in graphene after electron-beam irradiation,” Appl. Phys. Lett., vol. 102, no. 15, p. 153512, Apr. 2013.

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  • S. Rumyantsev, G. Liu, R. A. Potyrailo, A. A. Balandin, and M. S. Shur, “Selective Sensing of Individual Gases Using Graphene Devices,” IEEE Sens. J., vol. 13, no. 8, pp. 2818–2822, Aug. 2013.

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  • S. L. Rumyantsev, D. Coquillat, R. Ribeiro, M. Goiran, W. Knap, M. S. Shur, A. A. Balandin, and M. E. Levinshtein, “The effect of a transverse magnetic field on 1 /f noise in graphene,” Appl. Phys. Lett., vol. 103, no. 17, p. 173114, Oct. 2013.

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  • G. Xu, Y. Zhang, X. Duan, A. A. Balandin, and K. L. Wang, “Variability Effects in Graphene: Challenges and Opportunities for Device Engineering and Applications,” Proc. IEEE, vol. 101, no. 7, pp. 1670–1688, Jul. 2013.

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  • G. Liu, S. Ahsan, A. G. Khitun, R. K. Lake, and A. A. Balandin, “Graphene-based non-Boolean logic circuits,” J. Appl. Phys., vol. 114, no. 15, p. 154310, Oct. 2013.

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  • A. V. Muraviev, S. L. Rumyantsev, G. Liu, A. A. Balandin, W. Knap, and M. S. Shur, “Plasmonic and bolometric terahertz detection by graphene field-effect transistor,” Appl. Phys. Lett., vol. 103, no. 18, p. 181114, Oct. 2013.

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  • A. I. Cocemasov, D. L. Nika, and A. A. Balandin, “Phonons in twisted bilayer graphene,” Phys. Rev. B, vol. 88, no. 3, p. 35428, Jul. 2013.

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  • R. Gulotty, M. Castellino, P. Jagdale, A. Tagliaferro, and A. A. Balandin, “Effects of Functionalization on Thermal Properties of Single-Wall and Multi-Wall Carbon Nanotube–Polymer Nanocomposites,” ACS Nano, vol. 7, no. 6, pp. 5114–5121, Jun. 2013.

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  • D. L. Nika, A. I. Cocemasov, D. V. Crismari, and A. A. Balandin, “Thermal conductivity inhibition in phonon engineered core-shell cross-section modulated Si/Ge nanowires,” Appl. Phys. Lett., vol. 102, no. 21, p. 213109, May 2013.

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  • Z. Yan, C. Jiang, T. R. Pope, C. F. Tsang, J. L. Stickney, P. Goli, J. Renteria, T. T. Salguero, and A. A. Balandin, “Phonon and thermal properties of exfoliated TaSe 2 thin films,” J. Appl. Phys., vol. 114, no. 20, p. 204301, Nov. 2013.

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  • Z. Yan, G. Liu, J. M. Khan, and A. A. Balandin, “Graphene quilts for thermal management of high-power GaN transistors,” Nat. Commun., vol. 3, p. 827, May 2012.

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  • S. Rumyantsev, G. Liu, M. S. Shur, R. A. Potyrailo, and A. A. Balandin, “Selective gas sensing with a single pristine graphene transistor,” Nano Lett., vol. 12, no. 5, pp. 2294–2298, May 2012.

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  • J. Yu, G. Liu, A. V. Sumant, V. Goyal, and A. A. Balandin, “Graphene-on-diamond devices with increased current-carrying capacity: Carbon sp2-on-sp3 technology,” Nano Lett., vol. 12, no. 3, pp. 1603–1608, Mar. 2012.

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  • D. L. Nika, A. S. Askerov, and A. A. Balandin, “Anomalous size dependence of the thermal conductivity of graphene ribbons,” Nano Lett., vol. 12, no. 6, pp. 3238–3244, Jun. 2012.

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  • S. Chen, Q. Wu, C. Mishra, J. Kang, H. Zhang, K. Cho, W. Cai, A. a. Balandin, and R. S. Ruoff, “Thermal conductivity of isotopically modified graphene,” Nat. Mater., vol. 11, no. 3, pp. 203–207, 2012.

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  • K. M. F. Shahil and A. A. Balandin, “Graphene-multilayer graphene nanocomposites as highly efficient thermal interface materials,” Nano Lett., vol. 12, no. 2, pp. 861–867, Feb. 2012.

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  • D. L. Nika and A. A. Balandin, “Two-dimensional phonon transport in graphene,” J. Phys. Condens. Matter, vol. 24, no. 23, p. 233203, 2012.

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  • V. Goyal and A. A. Balandin, “Thermal properties of the hybrid graphene-metal nano-micro-composites: Applications in thermal interface materials,” Appl. Phys. Lett., vol. 100, no. 7, p. 73113, Feb. 2012.

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  • G. Liu, S. Rumyantsev, M. Shur, and A. A. Balandin, “Graphene thickness-graded transistors with reduced electronic noise,” Appl. Phys. Lett., vol. 100, no. 3, p. 33103, Jan. 2012.

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  • K. M. F. Shahil and A. a. Balandin, “Thermal properties of graphene and multilayer graphene: Applications in thermal interface materials,” Solid State Commun., vol. 152, no. 15, pp. 1331–1340, 2012.

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  • G. Liu, Y. Wu, Y. M. Lin, D. B. Farmer, J. A. Ott, J. Bruley, A. Grill, P. Avouris, D. Pfeiffer, A. A. Balandin, and C. Dimitrakopoulos, “Epitaxial graphene nanoribbon array fabrication using BCP-assisted nanolithography,” ACS Nano, vol. 6, no. 8, pp. 6786–6792, Aug. 2012.

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  • P. Goli, J. Khan, D. Wickramaratne, R. K. Lake, and A. A. Balandin, “Charge density waves in exfoliated films of van der waals materials: Evolution of raman spectrum in TiSe2,” Nano Lett., vol. 12, no. 11, pp. 5941–5945, 2012.

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  • K. M. F. Shahil, M. Z. Hossain, V. Goyal, and A. A. Balandin, “Micro-Raman spectroscopy of mechanically exfoliated few-quintuple layers of Bi2Te3, Bi2Se3, and Sb2Te3 materials,” J. Appl. Phys., vol. 111, no. 5, p. 54305, Mar. 2012.

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  • J. Khan, C. M. Nolen, D. Teweldebrhan, D. Wickramaratne, R. K. Lake, and A. A. Balandin, “Anomalous electron transport in back-gated field-effect transistors with TiTe 2 semimetal thin-film channels,” Appl. Phys. Lett., vol. 100, no. 4, p. 43109, Jan. 2012.

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  • A. A. Balandin and D. L. Nika, “Phononics in low-dimensional materials,” Mater. Today, vol. 15, no. 6, pp. 266–275, 2012.

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  • D. L. Nika, A. I. Cocemasov, C. I. Isacova, A. A. Balandin, V. M. Fomin, and O. G. Schmidt, “Suppression of phonon heat conduction in cross-section-modulated nanowires,” Phys. Rev. B - Condens. Matter Mater. Phys., vol. 85, no. 20, p. 205439, May 2012.

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  • K. Evanoff, J. Khan, A. A. Balandin, A. Magasinski, W. J. Ready, T. F. Fuller, and G. Yushin, “Towards ultrathick battery electrodes: Aligned carbon nanotube-enabled architecture,” Adv. Mater., vol. 24, no. 4, pp. 533–537, Jan. 2012.

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  • V. Goyal, A. V. Sumant, D. Teweldebrhan, and A. A. Balandin, “Direct low-temperature integration of nanocrystalline diamond with GaN substrates for improved thermal management of high-power electronics,” Adv. Funct. Mater., vol. 22, no. 7, pp. 1525–1530, Apr. 2012.

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  • A. A. Balandin, “Thermal properties of graphene and nanostructured carbon materials,” Nat. Mater., vol. 10, no. 8, pp. 569–581, 2011.

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  • A. A. Balandin, “The Heat Is On: Graphene Applications,” IEEE Nanotechnology Magazine, vol. 5, no. 4. pp. 15–19, 2011.

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  • X. Yang, G. Liu, M. Rostami, A. A. Balandin, and K. Mohanram, “Graphene Ambipolar Multiplier Phase Detector,” IEEE Electron Device Letters, vol. 32, no. 10. pp. 1328–1330, 2011

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  • C. M. Nolen, G. Denina, D. Teweldebrhan, B. Bhanu, and A. A. Balandin, “High-Throughput Large-Area Automated Identification and Quality Control of Graphene and Few-Layer Graphene Films,” ACS Nano, vol. 5, no. 2, pp. 914–922, Feb. 2011.

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  • S. L. Rumyantsev, G. Liu, M. S. Shur, and A. A. Balandin, “Observation of the memory steps in graphene at elevated temperatures,” Appl. Phys. Lett., vol. 98, no. 22, p. 222107, May 2011.

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  • S. Amini, H. Kalaantari, J. Garay, A. A. Balandin, and R. Abbaschian, “Growth of graphene and graphite nanocrystals from a molten phase,” J. Mater. Sci., vol. 46, no. 19, pp. 6255–6263, 2011.

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  • G. Liu, D. Teweldebrhan, and A. A. Balandin, “Tuning of Graphene Properties via Controlled Exposure to Electron Beams,” IEEE Transactions on Nanotechnology, vol. 10, no. 4. pp. 865–870, 2011.

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  • M. Z. Hossain, S. L. Rumyantsev, K. M. F. Shahil, D. Teweldebrhan, M. Shur, and A. A. Balandin, “Low-Frequency Current Fluctuations in ‘Graphene-like’ Exfoliated Thin-Films of Bismuth Selenide Topological Insulators,” ACS Nano, vol. 5, no. 4, pp. 2657–2663, Apr. 2011.

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  • M. Z. Hossain, S. L. Rumyantsev, D. Teweldebrhan, K. M. F. Shahil, M. Shur, and A. A. Balandin, “1/f noise in conducting channels of topological insulator materials,” Phys. status solidi, vol. 208, no. 1, pp. 144–146, Jan. 2011.

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  • M. Z. Hossain, S. L. Rumyantsev, D. Teweldebrhan, K. M. F. Shahil, M. Shur, and A. A. Balandin, “1/f noise in conducting channels of topological insulator materials,” Phys. status solidi, vol. 208, no. 1, pp. 144–146, Jan. 2011.

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  • A.A. Balandin, "Excellent thermal properties of graphene and prospects of graphene's applications in thermal management," Advancing Microelectronics Magazine, 38, 6 (2011).

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  • D. L. Nika, E. P. Pokatilov, A. A. Balandin, V. M. Fomin, A. Rastelli, and O. G. Schmidt, “Reduction of lattice thermal conductivity in one-dimensional quantum-dot superlattices due to phonon filtering,” Phys. Rev. B, vol. 84, no. 16, p. 165415, Oct. 2011.

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  • D. L. Nika, E. P. Pokatilov, and A. A. Balandin, “Theoretical description of thermal transport in graphene: The issues of phonon cut-off frequencies and polarization branches,” Phys. status solidi, vol. 248, no. 11, pp. 2609–2614, Nov. 2011

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  • R. Fernandez, D. Teweldebrhan, C. Zhang, A. Balandin, and S. Khizroev, “A comparative analysis of Ag and Cu heat sink layers in L10-FePt films for heat-assisted magnetic recording,” J. Appl. Phys., vol. 109, no. 7, p. 07B763, Apr. 2011.

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  • S. Ghosh, W. Bao, D. L. Nika, S. Subrina, E. P. Pokatilov, C. N. Lau, and A. A. Balandin, “Dimensional crossover of thermal transport in few-layer graphene,” Nat. Mater., vol. 9, no. 7, pp. 555–558, 2010.

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  • S. Rumyantsev, G. Liu, W. Stillman, M. Shur, and a a Balandin, “Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms.,” J. Phys. Condens. Matter, vol. 22, no. 39, p. 395302, 2010.

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  • X. Yang, G. Liu, A. A. Balandin, and K. Mohanram, “Triple-mode single-transistor graphene amplifier and its applications,” ACS Nano, vol. 4, no. 10, pp. 5532–5538, 2010.

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  • S. Amini, J. Garay, G. Liu, A. A. Balandin, and R. Abbaschian, “Growth of large-area graphene films from metal-carbon melts,” J. Appl. Phys., vol. 108, no. 9, 2010.

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  • J. Lin, D. Teweldebrhan, K. Ashraf, G. Liu, X. Jing, Z. Yan, R. Li, M. Ozkan, R. K. Lake, A. A. Balandin, and C. S. Ozkan, “Gating of single-layer graphene with single-stranded deoxyribonucleic acids,” Small, vol. 6, no. 10, pp. 1150–1155, 2010.

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  • D. Teweldebrhan, V. Goyal, M. Rahman, and A. A. Balandin, “Atomically-thin crystalline films and ribbons of bismuth telluride,” Appl. Phys. Lett., vol. 96, no. 5, 2010.

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  • D. Teweldebrhan, V. Goyal, and A. A. Balandin, “Exfoliation and characterization of bismuth telluride atomic quintuples and quasi-two-dimensional crystals,” Nano Lett., vol. 10, no. 4, pp. 1209–1218, 2010.

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  • K. M. F. Shahil, M. Z. Hossain, D. Teweldebrhan, and A. A. Balandin, “Crystal symmetry breaking in few-quintuple Bi2Te3 films: Applications in nanometrology of topological insulators,” Appl. Phys. Lett., vol. 96, no. 15, pp. 1–4, 2010.

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  • V. Goyal, D. Teweldebrhan, and A. A. Balandin, “Mechanically-exfoliated stacks of thin films of Bi2 Te3 topological insulators with enhanced thermoelectric performance,” Appl. Phys. Lett., vol. 97, no. 13, p. 133117, 2010.

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  • V. Goyal, S. Subrina, D. L. Nika, and A. A. Balandin, “Reduced thermal resistance of the silicon-synthetic diamond composite substrates at elevated temperatures,” Appl. Phys. Lett., vol. 97, no. 3, 2010.

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  • Bejenari, V. Kantser, and A. A. Balandin, “Thermoelectric properties of electrically gated bismuth telluride nanowires,” Phys. Rev. B - Condens. Matter Mater. Phys., vol. 81, no. 7, 2010.

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  • A. Balandin, S. Ghosh, D. L. Nika, and E. P. Pokatilov, “Thermal Conduction in Suspended Graphene Layers,” Fullerenes, Nanotub. Carbon Nanostructures, vol. 18, no. 4–6, pp. 474–486, 2010.

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  • G. Liu, W. Stillman, S. Rumyantsev, Q. Shao, M. Shur, and A. A. Balandin, “Low-frequency electronic noise in the double-gate single-layer graphene transistors,” Appl. Phys. Lett., vol. 95, no. 3, p. 33103, Jul. 2009.

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  • Q. Shao, G. Liu, D. Teweldebrhan, A. a. Balandin, S. Rumyantsev, M. S. Shur, and D. Yan, “Flicker noise in bilayer graphene transistors,” … Device Lett. IEEE, vol. 30, no. 3, pp. 288–290, 2009.

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  • D. Teweldebrhan and A. A. Balandin, “Modification of graphene properties due to electron-beam irradiation,” Appl. Phys. Lett., vol. 94, no. 1, 2009.

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  • Calizo, I. Bejenari, M. Rahman, G. Liu, and A. A. Balandin, “Ultraviolet Raman microscopy of single and multilayer graphene,” J. Appl. Phys., vol. 106, p. 43509, 2009.

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  • Calizo, S. Ghosh, W. Bao, F. Miao, C. Ning Lau, and A. A. Balandin, “Raman nanometrology of graphene: Temperature and substrate effects,” Solid State Commun., vol. 149, no. 27–28, pp. 1132–1135, 2009.

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  • Balandin, “Chill out,” IEEE Spectr., vol. 46, no. 10, pp. 34–39, 2009.

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  • D. L. Nika, S. Ghosh, E. P. Pokatilov, and A. A. Balandin, “Lattice thermal conductivity of graphene flakes: Comparison with bulk graphite,” Appl. Phys. Lett., vol. 94, no. 20, 2009.

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  • D. L. Nika, E. P. Pokatilov, A. S. Askerov, and A. A. Balandin, “Phonon thermal conduction in graphene: Role of Umklapp and edge roughness scattering,” Phys. Rev. B - Condens. Matter Mater. Phys., vol. 79, no. 15, 2009.

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  • A. Balandin, D. L. Nika, E. P. Pokatilov, and A. S. Askerov, “Comment on ‘First principles calculation of lattice thermal conductivity in mono- and bi-layer graphene’ (arXiv:0902.0642),” Mar. 2009.

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  • S. Subrina, D. Kotchetkov, and A. A. Balandin, “Heat Removal in Silicon-on-Insulator Integrated Circuits With Graphene Lateral Heat Spreaders,” IEEE Electron Device Letters, vol. 30, no. 12. pp. 1281–1283, 2009.

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  • S. Ghosh, D. L. Nika, E. P. Pokatilov, and A. a. Balandin, “Heat conduction in graphene: experimental study and theoretical interpretation,” New J. Phys., vol. 11, no. 9, p. 95012, 2009.

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  • S. Ghosh, D. Teweldebrhan, J. R. Morales, J. E. Garay, and A. A. Balandin, “Thermal properties of the optically transparent pore-free nanostructured yttria-stabilized zirconia,” J. Appl. Phys., vol. 106, no. 11, 2009.

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  • A. A. Balandin, S. Ghosh, W. Bao, I. Calizo, D. Teweldebrhan, F. Miao, and C. N. Lau, “Superior Thermal Conductivity of Single-Layer Graphene,” Nano Lett., vol. 8, no. 3, pp. 902–907, Mar. 2008.

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  • F. Parvizi, D. Teweldebrhan, S. Ghosh, I. Calizo, A. A. Balandin, H. Zhu, and R. Abbaschian, “Properties of graphene produced by the high pressure–high temperature growth process,” Micro Nano Lett., vol. 3, no. 1, p. 29, 2008.

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  • I. Calizo, D. Teweldebrhan, W. Bao, F. Miao, C. N. Lau, and A. A. Balandin, “Spectroscopic raman nanometrology of graphene and graphene multilayers on arbitrary substrates,” J. Phys. Conf. Ser., vol. 109, no. 1, p. 12008, Mar. 2008.

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  • S. Ghosh, I. Calizo, D. Teweldebrhan, E. P. Pokatilov, D. L. Nika, A. A. Balandin, W. Bao, F. Miao, and C. N. Lau, “Extremely high thermal conductivity of graphene: Prospects for thermal management applications in nanoelectronic circuits,” Appl. Phys. Lett., vol. 92, no. 15, p. 151911, Apr. 2008.

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  • Q. Shao, G. Liu, D. Teweldebrhan, and A. A. Balandin, “High-temperature quenching of electrical resistance in graphene interconnects,” Appl. Phys. Lett., vol. 92, no. 20, p. 202108, May 2008.

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  • M. Shamsa, P. M. Solomon, K. A. Jenkins, A. A. Balandin, and W. Haensch, “Investigation of Thermal Crosstalk Between SOI FETs by the Subthreshold Sensing Technique,” IEEE Trans. Electron Devices, vol. 55, no. 7, pp. 1733–1740, Jul. 2008.

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  • A. A. Balandin, M. Shamsa, W. L. Liu, C. Casiraghi, and A. C. Ferrari, “Thermal conductivity of ultrathin tetrahedral amorphous carbon films,” Appl. Phys. Lett., vol. 93, no. 4, p. 43115, Jul. 2008.

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  • M. Shamsa, S. Ghosh, I. Calizo, V. Ralchenko, A. Popovich, and A. A. Balandin, “Thermal conductivity of nitrogenated ultrananocrystalline diamond films on silicon,” J. Appl. Phys., vol. 103, no. 8, p. 83538, Apr. 2008.

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  • D. L. Nika, E. P. Pokatilov, and A. A. Balandin, “Phonon-engineered mobility enhancement in the acoustically mismatched silicon/diamond transistor channels,” Appl. Phys. Lett., vol. 93, no. 17, p. 173111, Oct. 2008.

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  • S. Subrina and D. Kotchetkov, “Simulation of heat conduction in suspended graphene flakes of variable shapes,” J. Nanoelectron. Optoelectron., vol. 3, no. 3, pp. 249–269, 2008.

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  • R. Ikkawi, N. Amos, A. Lavrenov, A. Krichevsky, D. Teweldebrhan, S. Ghosh, A. A. Balandin, D. Litvinov, and S. Khizroev, “Near-field optical transducer for heat-assisted magnetic recording for beyond-10-Tbit/in2 densities,” J. Nanoelectron. Optoelectron., vol. 3, no. 1, pp. 44–54, 2008.

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  • E. P. Pokatilov, D. L. Nika, A. S. Askerov, and A. A. Balandin, “Size-quantized oscillations of the electron mobility limited by the optical and confined acoustic phonons in the nanoscale heterostructures,” J. Appl. Phys., vol. 102, no. 5, p. 54304, 2007.

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  • Concetta Nobile et al., “Confined Optical Phonon Modes in Aligned Nanorod Arrays Detected by Resonant Inelastic Light Scattering,” 2007.

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  • D. L. Nika, E. P. Pokatilov, Q. Shao, and A. A. Balandin, “Charge-carrier states and light absorption in ordered quantum dot superlattices,” Phys. Rev. B - Condens. Matter Mater. Phys., vol. 76, no. 12, p. 125417, Sep. 2007.

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  • Q. Shao, A. A. Balandin, A. I. Fedoseyev, and M. Turowski, “Intermediate-band solar cells based on quantum dot supracrystals,” Appl. Phys. Lett., vol. 91, no. 16, p. 163503, Oct. 2007.

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  • P. M. Solomon, M. Shamsa, K. A. Jenkins, C. P. D’Emic, A. A. Balandin, and W. Haensch, “Measurements of inter-and-intra device transient thermal transport on SOI FETs,” in Technical Digest - International Electron Devices Meeting, IEDM, 2007, pp. 479–482.

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  • N. D. Zincenco, D. L. Nika, E. P. Pokatilov, and A. A. Balandin, “Acoustic phonon engineering of thermal properties of silicon-based nanostructures,” J. Phys. Conf. Ser., vol. 92, no. 1, p. 12086, Dec. 2007.

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  • E. P. Pokatilov, D. L. Nika, A. S. Askerov, N. D. Zincenco, and A. A. Balandin, “The size-quantized oscillations of the optical-phonon-limited electron mobility in AlN/GaN/AlN nanoscale heterostructures,” J. Phys. Conf. Ser., vol. 92, no. 1, p. 12022, Dec. 2007.

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  • E. P. Pokatilov, D. L. Nika, N. D. Zincenco, and A. A. Balandin, “Electron-polar optical phonon scattering suppression and mobility enhancement in wurtzite heterostructures,” J. Phys. Conf. Ser., vol. 92, no. 2007, p. 12050, Dec. 2007.

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  • I. Calizo, W. Bao, F. Miao, C. N. Lau, and A. A. Balandin, “The effect of substrates on the Raman spectrum of graphene: Graphene- on-sapphire and graphene-on-glass,” Appl. Phys. Lett., vol. 91, no. 20, p. 201904, 2007.

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  • I. Calizo, F. Miao, W. Bao, C. N. Lau, and A. A. Balandin, “Variable temperature Raman microscopy as a nanometrology tool for graphene layers and graphene-based devices,” Appl. Phys. Lett., vol. 91, no. 7, p. 71913, 2007.

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  • R. Mao, B. D. Kong, K. W. Kim, T. Jayasekera, A. Calzolari, and M. B. Nardelli, “Phonon engineering in nanostructures: Controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions,” Appl. Phys. Lett., vol. 101, no. 11, p. 113111, 2012.

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  • I. Calizo, A. A. Balandin, W. Bao, F. Miao, and C. N. Lau, “Temperature Dependence of the Raman Spectra of Graphene and Graphene Multilayers,” Nano Lett., vol. 7, no. 9, pp. 2645–2649, Sep. 2007.

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  • V. A. Fonoberov, K. A. Alim, A. A. Balandin, F. Xiu, and J. Liu, “Photoluminescence investigation of the carrier recombination processes in ZnO quantum dots and nanocrystals,” Phys. Rev. B, vol. 73, no. 16, p. 165317, Apr. 2006.

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  • V. A. Fonoberov and A. A. Balandin, “ZnO Quantum Dots: Physical Properties and Optoelectronic Applications,” J. Nanoelectron. Optoelectron., vol. 1, no. 1, pp. 19–38, Apr. 2006.

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  • F. X. Xiu et al., “ZnO growth on Si with low-temperature CdO and ZnO buffer layers by molecular-beam epitaxy,” J. Electron. Mater., vol. 35, no. 4, pp. 691–694, Apr. 2006.

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  • V.A. Fonoberov and A.A. Balandin, "Properties of GaN and ZnO quantum dots." in Handbook of Semiconductor Nanostructures and Nanodevices, Vol. 3 (American Scientific Publishers, Los Angeles, 2006), Edited by A.A. Balandin and K.L. Wang, pp 119-158

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  • V.A. Fonoberov and A. A. Balandin*, “Giant Enhancement of the Carrier Mobility in Silicon Nanowires with Diamond Coating,” Nano Lett., vol. 6, no. 11, pp. 2442–2446, 2006.

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  • S. V. Kalinin, S. Jesse, W. Liu, and A. A. Balandin, “Evidence for possible flexoelectricity in tobacco mosaic viruses used as nanotemplates,” Appl. Phys. Lett., vol. 88, no. 15, p. 153902, Apr. 2006.

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  • W. L. Liu et al., “Thermal conduction in nanocrystalline diamond films: Effects of the grain boundary scattering and nitrogen doping,” Appl. Phys. Lett., vol. 89, no. 17, p. 171915, Oct. 2006.

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  • M. Shamsa, W. L. Liu, A. A. Balandin, C. Casiraghi, W. I. Milne, and A. C. Ferrari, “Thermal conductivity of diamond-like carbon films,” Appl. Phys. Lett., vol. 89, no. 16, p. 161921, Oct. 2006.

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  • D. S. Choi et al., “Transport study of a single bismuth nanowire fabricated by the silver and silicon nanowire shadow masks,” Appl. Phys. Lett., vol. 89, no. 14, p. 141503, Oct. 2006.

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  • E. P. Pokatilov, D. L. Nika, and A. A. Balandin, “Electron mobility enhancement in AlN∕GaN∕AlN heterostructures with InGaN nanogrooves,” Appl. Phys. Lett., vol. 89, no. 11, p. 112110, Sep. 2006.

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  • V. O. Turin and A. A. Balandin, “Electrothermal simulation of the self-heating effects in GaN-based field-effect transistors,” J. Appl. Phys., vol. 100, no. 5, p. 54501, Sep. 2006.

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  • E. P. Pokatilov, D. L. Nika, and A. A. Balandin, “Built-in field effect on the electron mobility in AlN∕GaN∕AlN quantum wells,” Appl. Phys. Lett., vol. 89, no. 11, p. 113508, Sep. 2006.

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  • W. L. Liu, Y. L. Chen, A. A. Balandin, and K. L. Wang, “Capacitance–Voltage Spectroscopy of Trapping States in GaN/AlGaN Heterostructure Field-Effect Transistors,” J. Nanoelectron. Optoelectron., vol. 1, no. 2, pp. 258–263, Aug. 2006.

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  • K. A. Alim, V. A. Fonoberov, and A. A. Balandin, “Origin of the optical phonon frequency shifts in ZnO quantum dots,” Appl. Phys. Lett., vol. 86, no. 5, p. 53103, Jan. 2005.

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  • K. A. Alim, V. A. Fonoberov, M. Shamsa, and A. A. Balandin, “Micro-Raman investigation of optical phonons in ZnO nanocrystals,” J. Appl. Phys., vol. 97, no. 12, p. 124313, Jun. 2005.

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  • V. A. Fonoberov and A. A. Balandin, “Polar optical phonons in wurtzite spheroidal quantum dots: theory and application to ZnO and ZnO/MgZnO nanostructures,” J. Phys. Condens. Matter, vol. 17, no. 7, pp. 1085–1097, Feb. 2005.

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  • V. A. Fonoberov and A. A. Balandin, “Comment on ‘giant exciton-light coupling in ZnO quantum dots’ [Appl. Phys. Lett. 81, 748 (2002)],” Appl. Phys. Lett., vol. 86, no. 22, p. 226101, May 2005.

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  • M. Shamsa, W. Liu, A. A. Balandin, and J. Liu, “Phonon-hopping thermal conduction in quantum dot superlattices,” Appl. Phys. Lett., vol. 87, no. 20, p. 202105, Nov. 2005.

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  • W. Liu, A. A. Balandin, C. Lee, and H. Y. Lee, “Increased thermal conductivity of free-standing low-dislocation-density GaN films,” Phys. Status Solidi Appl. Mater. Sci., vol. 202, no. 12, pp. 135–137, Sept. 2005.

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  • W. Liu and A. A. Balandin, “Thermal conduction in AlxGa1-xN alloys and thin films,” J. Appl. Phys., vol. 97, no. 7, p. 73710, Mar. 2005.

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  • Y. Bao, W. L. Liu, M. Shamsa, K. Alim, A. A. Balandin, and J. L. Liu, “Electrical and Thermal Conductivity of Ge∕Si Quantum Dot Superlattices,” J. Electrochem. Soc., vol. 152, no. 6, pp. G432-G435, Apr. 2005.

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  • W. Liu and A. a. Balandin, “Thermoelectric effects in wurtzite GaN and AlxGa1−xN alloys,” Journal of Applied Physics, vol. 97, no. 12, p. 123705, Jun. 2005.

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  • V. A. Fonoberov and A. A. Balandin, “Phonon confinement effects in hybrid virus-inorganic nanotubes for nanoelectronic applications,” Nano Lett., vol. 5, no. 10, pp. 1920–1923, Sept. 2005.

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  • A. A. Balandin, “Nanophononics: Phonon Engineering in Nanostructures and Nanodevices,” J. Nanosci. Nanotechnol., vol. 5, no. 7, pp. 1015–1022, Jul. 2005.

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  • W. L. Liu, K. Alim, A. A. Balandin, D. M. Mathews, and J. A. Dodds, “Assembly and characterization of hybrid virus-inorganic nanotubes,” Appl. Phys. Lett., vol. 86, no. 25, p. 253108, Jun. 2005.

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  • E. P. Pokatilov, D. L. Nika, and A. A. Balandin, “Acoustic-phonon propagation in rectangular semiconductor nanowires with elastically dissimilar barriers,” Phys. Rev. B - Condens. Matter Mater. Phys., vol. 72, no. 11, p. 113311, Sept. 2005.

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  • E. P. Pokatilov, D. L. Nika, and A. A. Balandin, “Acoustic phonon engineering in coated cylindrical nanowires,” Superlattices Microstruct., vol. 38, no. 3, pp. 168–183, Sept. 2005.

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  • A. A. Balandin and V. A. Fonoberov, “Vibrational Modes of Nano-Template Viruses,” J. Biomed. Nanotechnol., vol. 1, no. 1, pp. 90–95, Mar. 2005.

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  • Y. Bao, A. A. Balandin, J. L. Liu, J. Liu, and Y. H. Xie, “Experimental investigation of Hall mobility in Ge/Si quantum dot superlattices,” Appl. Phys. Lett., vol. 84, no. 17, pp. 3355–3357, Apr. 2004.

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  • V. A. Fonoberov and A. A. Balandin, “Origin of ultraviolet photoluminescence in ZnO quantum dots: Confined excitons versus surface-bound impurity exciton complexes,” Appl. Phys. Lett., vol. 85, no. 24, pp. 5971–5973, Dec. 2004.

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  • V. A. Fonoberov and A. A. Balandin, “Radiative lifetime of excitons in ZnO nanocrystals: The dead-layer effect,” Phys. Rev. B, vol. 70, no. 19, p. 195410, Nov. 2004.

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  • V. A. Fonoberov and A. A. Balandin, “Optical properties of wurtzite and zinc-blende GaN/AlN quantum dots,” J. Vac. Sci. Technol. B Microelectron. Nanom. Struct., vol. 22, no. 4, p. 2190, 2004.

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  • V. A. Fonoberov and A. A. Balandin, “Interface and confined optical phonons in wurtzite nanocrystals,” Phys. Rev. B, vol. 70, no. 23, p. 233205, Dec. 2004.

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  • V. A. Fonoberov and A. A. Balandin, “Interface and confined polar optical phonons in spherical ZnO quantum dots with wurtzite crystal structure,” Phys. status solidi, vol. 1, no. 11, pp. 2650–2653, Nov. 2004.

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  • V. A. Fonoberov and A. A. Balandin, “Low-frequency vibrational modes of viruses used for nanoelectronic self-assemblies,” Phys. status solidi, vol. 241, no. 12, pp. R67–R69, Oct. 2004.

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  • E. P. Pokatilov, D. L. Nika, and A. A. Balandin, “A phonon depletion effect in ultrathin heterostructures with acoustically mismatched layers,” Appl. Phys. Lett., vol. 85, no. 5, pp. 825–827, Aug. 2004.

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  • A. A. Balandin, D. L. Nika, and E. P. Pokatilov, “Phonon spectrum and group velocities in wurtzite hetero-structures,” in physica status solidi (c), 2004, vol. 1, no. 11, pp. 2658–2661.

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  • E. P. Pokatilov, D. L. Nika, and A. A. Balandin, “Confined electron-confined phonon scattering rates in wurtzite AlN/GaN/AlN heterostructures,” J. Appl. Phys., vol. 95, no. 10, pp. 5626–5632, May 2004.

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  • I. Sur, A. Casian, and A. Balandin, “Electronic thermal conductivity and thermoelectric figure of merit of n -type PbTe/Pb1−xEuxTe quantum wells,” Phys. Rev. B, vol. 69, no. 3, p. 35306, Jan. 2004.

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  • W. Liu and A. A. Balandin, “Temperature dependence of thermal conductivity of AlxGa1−xN thin films measured by the differential 3ω technique,” Appl. Phys. Lett., vol. 85, no. 22, pp. 5230–5232, Nov. 2004.

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  • V. O. Turin and A. A. Balandin, “Performance degradation of GaN field-effect transistors due to thermal boundary resistance at GaN∕substrate interface,” Electron. Lett., vol. 40, no. 1, p. 81, 2004.

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  • W. L. Liu, V. O. Turin, A. A. Balandin, Y. L. Chen, and K. L. Wang, “The ambient temperature effect on current-voltage characteristics of surface-passivated GaN-based field-effect transistors,” Mater. Res. Soc. Internet J. Nitride Semicond. Res., vol. 9, 2004.

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  • A. A. Balandin and O. L. Lazarenkova, “Mechanism for thermoelectric figure-of-merit enhancement in regimented quantum dot superlattices,” Appl. Phys. Lett., vol. 82, no. 3, pp. 415–417, Jan. 2003.

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  • V. A. Fonoberov and A. A. Balandin, “Excitonic properties of strained wurtzite and zinc-blende GaN/AlxGa1−xN quantum dots,” J. Appl. Phys., vol. 94, no. 11, pp. 7178–7186, Dec. 2003.

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  • V. A. Fonoberov, E. P. Pokatilov, and A. A. Balandin, “Interplay of Confinement, Strain, and Piezoelectric Effects in the Optical Spectrum of GaN Quantum Dots,” J. Nanosci. Nanotechnol., vol. 3, no. 3, pp. 253–256, Jun. 2003.

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  • O. L. Lazarenkova and A. A. Balandin, “Raman scattering from three-dimensionally regimented quantum dot superlattices,” Superlattices Microstruct., vol. 33, no. 1–2, pp. 95–101, Jan. 2003.

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  • E. P. Pokatilov, D. L. Nika, and A. A. Balandin, “Phonon spectrum and group velocities in AlN/GaN/AlN and related heterostructures,” Superlattices Microstruct., vol. 33, no. 3, pp. 155–171, Mar. 2003.

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  • K. A. Filippov and A. A. Balandin, “The effect of the thermal boundary resistance on self-heating of AlGaN/GaN HFETs,” MRS Internet J. Nitride Semicond. Res., vol. 8, p. e4, 2003.

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  • O. L. Lazarenkova and A. A. Balandin, “Electron and phonon energy spectra in a three-dimensional regimented quantum dot superlattice,” Phys. Rev. B, vol. 66, no. 24, p. 245319, Dec. 2002.

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  • V. A. Fonoberov, E. P. Pokatilov, and A. A. Balandin, “Exciton states and optical transitions in colloidal CdS quantum dots: Shape and dielectric mismatch effects,” Phys. Rev. B, vol. 66, no. 8, pp. 853101–8531013, Aug. 2002.

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  • J. Zou, D. Kotchetkov, A. A. Balandin, D. I. Florescu, and F. H. Pollak, “Thermal conductivity of GaN films: Effects of impurities and dislocations,” J. Appl. Phys., vol. 92, no. 5, pp. 2534–2539, Sep. 2002.

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  • A. Casian, A. Balandin, V. Dusciac, and I. Coropceanu, “A mechanism for extremely high electrical conductivity in a quasi-one-dimensional organic crystal,” Phys. Low-Dim. Struct, vol. 9/10, pp. 43–53, 2002.

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  • A. A. Balandin, “Nanoscale thermal management,” IEEE Potentials, vol. 21, no. 1, pp. 11–15, 2002.

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  • D. Kotchetkov, J. Zou, A. A. Balandin, D. I. Florescu, and F. H. Pollak, “Effect of dislocations on thermal conductivity of GaN layers,” Appl. Phys. Lett., vol. 79, no. 26, pp. 4316–4318, Dec. 2001.

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  • O. L. Lazarenkova and A. A. Balandin, “Miniband formation in a quantum dot crystal,” J. Appl. Phys., vol. 89, no. 10, pp. 5509–5515, May 2001.

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  • J. Zou and A. Balandin, “Phonon heat conduction in a semiconductor nanowire,” J. Appl. Phys., vol. 89, no. 5, pp. 2932–2938, Mar. 2001.

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  • A. Khitun, A. Balandin, J. L. Liu, and K. L. Wang, “The effect of the long-range order in a quantum dot array on the in-plane lattice thermal conductivity,” Superlattices Microstruct., vol. 30, no. 1, pp. 1–8, Jul. 2001.

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  • A. A. Balandin, “Gate-voltage dependence of Iow-frequency noise in GaN/AIGaN heterostructure field-effect transistors,” Electron. Lett., vol. 36, no. 10, pp. 912–913, 2000.

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  • A. Balandin, K. L. Wang, S. Cai, R. Li, C. R. Viswanathan, E. N. Wang, and M. Wojtowicz, “Investigation of flicker noise and deep-levels in GaN/AlGaN transistors,” J. Electron. Mater., vol. 29, no. 3, pp. 297–301, Mar. 2000.

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  • R. Vrijen, E. Yablonovitch, K. Wang, H. W. Jiang, A. Balandin, V. Roychowdhury, T. Mor, and D. DiVincenzo, “Electron Spin Resonance Transistors for Quantum Computing in Silicon-Germanium Heterostructures,” Phys. Rev. A, vol. 62, no. 1, p. 12306, Jun. 2000.

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  • A. Balandin, G. Jin, and K. L. Wang, “Issues of practical realization of a quantum dot register for quantum computing,” J. Electron. Mater., vol. 29, no. 5, pp. 549–553, May 2000.

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  • A. Balandin, K. L. Wang, N. Kouklin, and S. Bandyopadhyay, “Raman spectroscopy of electrochemically self-assembled CdS quantum dots,” Appl. Phys. Lett., vol. 76, no. 2, pp. 137–139, 2000.

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  • A. Balandin, “Thermal properties of semiconductor low-dimensional structures,” Phys. Low-Dim. Struct., vol. 1/2, no. 1, pp. 1–28, 2000.

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  • A. Khitun, A. Balandin, K. L. Wang, and G. Chen, “Enhancement of the thermoelectric figure of merit of Si1-xGex quantum wires due to spatial confinement of acoustic phonons,” Phys. E Low-Dimensional Syst. Nanostructures, vol. 8, no. 1, pp. 13–18, Jul. 2000.

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  • A. Khitun, A. Balandin, J. L. Liu, and K. L. Wang, “In-plane lattice thermal conductivity of a quantum-dot superlattice,” J. Appl. Phys., vol. 88, no. 2, pp. 696–699, 2000.

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  • A. Balandin, “Thermoelectric Applications of Low-Dimensional Structures with Acoustically Mismatched Boundaries,” Phys. Low Dimens. Struct., vol. 5/6, pp. 73–91, 2000.

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  • A. Balandin, S. Morozov, G. Wijeratne, S. J. Cai, R. Li, J. Li, K. L. Wang, C. R. Viswanathan, and Y. Dubrovskii, “Effect of channel doping on the low-frequency noise in GaN/AlGaN heterostructure field-effect transistors,” Appl. Phys. Lett., vol. 75, no. 14, pp. 13–15, 1999.

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  • A. Balandin, S.V. Morozov, S. Cai, R. Li, K.L. Wang, G. Wijeratne, C.R. Viswanathan, “Low Flicker-Noise GaN / AlGaN Heterostructure Communications,” IEEE Trans. Microw. Theory Tech., vol. 47, no. 8, pp. 1413–1417, 1999.

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  • A. Balandin, K. L. Wang, A. Svizhenko, and S. Bandyopadhyay, “Fundamental 1/f noise and the Hooge parameter in semiconductor quantum wires,” IEEE Trans. Electron Devices, vol. 46, no. 6, pp. 1240–1244, Jun. 1999.

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  • A. Balandin and K. L. Wang, “Feasibility study of the quantum XOR gate based on coupled asymmetric semiconductor quantum dots,” Superlattices and Microstructures, vol. 25, no. 3. pp. 509–518, Mar-1999.

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  • J. L. Liu, W. G. Wu, A. Balandin, G. L. Jin, and K. L. Wang, “Intersubband Absorption in Boron-Doped Multiple Ge Quantum Dots,” Appl. Phys. Lett., vol. 74, no. 2, pp. 185–187, 1999.

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  • J. L. Liu, W. G. Wu, A. Balandin, G. Jin, Y. H. Luo, S. G. Thomas, Y. Lu, and K. L. Wang “Observation of inter-sub-level transitions in modulation-doped Ge quantum dots,” Appl. Phys. Lett., vol. 75, no. 12, pp. 1999–2001, 1999.

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  • A. Khitun, A. Balandin, and K. L. Wang, “Modification of the lattice thermal conductivity in silicon quantum wires due to spatial confinement of acoustic phonons,” Superlattices Microstruct., vol. 26, no. 3, pp. 181–193, Sep. 1999.

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  • A. Balandin and K. L. Wang, “Significant decrease of the lattice thermal conductivity due to phonon confinement in a free-standing semiconductor quantum well,” Phys. Rev. B, vol. 58, no. 3, pp. 1544–1549, Jul. 1998.

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  • A. Balandin and K. L. Wang, “Effect of phonon confinement on the thermoelectric figure of merit of quantum wells,” J. Appl. Phys., vol. 84, no. 11, pp. 6149–6153, 1998.

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  • A. Balandin and K. L. Wang, “Effect of phonon confinement on the thermoelectric figure of merit of quantum wells,” J. Appl. Phys., vol. 84, no. 11, pp. 6149–6153, 1998.

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  • A. Svizhenko, A. Balandin, S. Bandyopadhyay, and M. A. Stroscio, “Electron interaction with confined acoustic phonons in quantum wires subjected to a magnetic field,” Phys. Rev. B, vol. 57, no. 8, pp. 4687–4693, Feb. 1998.

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  • A. Balandin, S. Cai, R. Li, K. L. Wang, V. R. Rao, and C. R. Viswanathan, “Flicker noise in GaN/Al0.15Ga0.85N doped channel heterostructure field effect transistors,” IEEE Electron Device Lett., vol. 19, no. 12, pp. 475–477, Dec. 1998.

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  • S. Bandyopadhyay, A. Balandin, V. P. Roychowdhury, and F. Vatan, “Nanoelectronic implementations of reversible and quantum logic,” Superlattices Microstruct., vol. 23, no. 3–4, pp. 445–464, Mar. 1998.

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