Sergey Rumyantsev

Biography

Sergey Rumyantsev is a Visiting Researcher with Professor Balandin’s Nano-Device Laboratory (NDL) at the University of California – Riverside (UCR). He received his M.S.E.E. degree from the Leningrad Electrotechnical Institute, Russia, in 1977, Ph.D. degree in Physics from the Leningrad Polytechnical Institute in 1986, and the Doctor of Science (Habilitation) degree from the A.F. Ioffe Institute of Physics and Technology, Russia, in 1996. Since 1999 he worked at the Rensselaer Polytechnic Institute and Ioffe Institute. His current research interests include low-frequency noise in semiconductor devices, nano-electronics, wide-band-gap semiconductors (SiC, GaN, CdS), power SiC and GaN devices, ultraviolet light emitting diodes, terahertz electronics, charge-density-wave effects in van der Waals materials, and magnonics. He authored, co-authored, or edited 7 books and published more than 170 papers in refereed journals.